| PART |
Description |
Maker |
| DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36
|
Maxim Integrated Products, Inc.
Dallas Semiconductor
|
| GS78108B-12 GS78108B-12I GS78108B GS78108B-10 GS78 |
1M x 8 8Mb Asynchronous SRAM 1M X 8 STANDARD SRAM, 15 ns, PBGA119
|
GSI Technology, Inc.
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| IBM0418A81QLAB IBM0418A41QLAB |
8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM)
4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)
|
IBM Microeletronics
|
| MT58L512L18D |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| MT58L512L18F MT58L256L32F |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| DS2065W DS2065W-100 |
3.3V Single-Piece 8Mb Nonvolatile SRAM
|
Maxim Integrated Products
|
| MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| N08L163WC2C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| N08L63W2AB27I N08L63W2AB27IT N08L63W2AB7I N08L63W2 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
|
ON Semiconductor
|
| N08T1630CXB |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| N08L163WC1CT1-55IL N08L163WC1C N08L163WC1CT1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
